Join Teledyne LeCroy to learn more about how to test and qualify gallium nitride (GaN) metal–oxide–semiconductor field-effect transistors (MOSFETs), silicon carbide (SiC) MOSFETs and SiC insulated gate bipolar transistors (IGBTs) using the double-pulse test circuit and high voltage isolated probes. Learn how to use benchtop test instruments to effectively (and safely) analyze circuits in a qualitative and quantitative manner.
Topics to be covered in this webinar include:
- Double-pulse testing example (both low and high-side of a half bridge)
- Test instrument consideration
- Testing safely
- De-skewing probes
- Switching loss, conduction loss and efficiency measurements
- Reverse recovery measurements
Who should attend? Hardware engineers, systems engineers, production engineers, technicians testing GaN MOSFETs, SiC MOSFETs and SiC IGBTs.
What attendees will learn: Attendees will learn how to perform the double-pulse test safely and how to capture and characterize a device’s dynamic response.
Register for this one-hour event, scheduled for Wednesday, June 12, 2024, at 11:00 AM Pacific/2:00 PM Eastern