Industrial Electronics

Webinar: How to test GaN and SiC MOSFET and IGBT devices

27 May 2024

Join Teledyne LeCroy to learn more about how to test and qualify gallium nitride (GaN) metal–oxide–semiconductor field-effect transistors (MOSFETs), silicon carbide (SiC) MOSFETs and SiC insulated gate bipolar transistors (IGBTs) using the double-pulse test circuit and high voltage isolated probes. Learn how to use benchtop test instruments to effectively (and safely) analyze circuits in a qualitative and quantitative manner.

Source: Teledyne LeCroySource: Teledyne LeCroy

Topics to be covered in this webinar include:

  • Double-pulse testing example (both low and high-side of a half bridge)
  • Test instrument consideration
  • Testing safely
  • De-skewing probes
  • Switching loss, conduction loss and efficiency measurements
  • Reverse recovery measurements

Who should attend? Hardware engineers, systems engineers, production engineers, technicians testing GaN MOSFETs, SiC MOSFETs and SiC IGBTs.

What attendees will learn: Attendees will learn how to perform the double-pulse test safely and how to capture and characterize a device’s dynamic response.

Register for this one-hour event, scheduled for Wednesday, June 12, 2024, at 11:00 AM Pacific/2:00 PM Eastern

To contact the author of this article, email GlobalSpecEditors@globalspec.com


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