Texas Instruments (TI) has expanded its wide bandgap portfolio designed for improved power density and reduced size in AC/DC consumer power electronics and industrial systems.
The gallium nitride (GaN) field-effect transistors (FETs) with integrated gate drivers address thermal design challenges to keep adapters cooler while allowing for more power.
Called LGM3622, LMG3624 and LMG3626, the GaN devices eliminate the need for an external shunt resistor and reduce power losses by as much as 94% when compared to traditional current-sensing circuits used with discrete GaN and silicon FETs.
Additionally, TI said the devices help reduce the solution size of a typical 67 W power adapter by as much as 50% compared to silicon-based solutions.
The devices are used in common topologies in AC/DC power conversions such as:
- Quasi-resonant flyback
- Asymmetrical half bridge flyback
- Inductor-inductor-converter
- Totem-pole power factor correction
- Active clamp flyback
