Texas Instruments (TI) has added new 650 V and 600 V gallium nitride (GaN) field-effect transistors (FETs) for automotive and industrial applications. With a fast-switching, 2.2 MHz integrated gate driver, the new families of GaN FETs help engineers deliver twice the power density, achieve 99% efficiency and reduce the size of power magnetics by 59% compared to existing solutions.
Source: Texas InstrumentsTI developed these new FETs using its proprietary GaN materials and processing capabilities on a GaN-on-silicon (Si) substrate, providing a cost and supply-chain advantage over comparable substrate materials such as silicon carbide (SiC).
Vehicle electrification is transforming the automotive industry, and consumers are increasingly demanding vehicles that can charge faster and drive farther. As a result, engineers are being challenged to design compact, lightweight automotive systems without compromising vehicle performance.
Using TI's new automotive GaN FETs can help reduce the size of electric vehicle (EV) onboard chargers and DC/DC converters by as much as 50% compared to existing Si or SiC solutions — enabling engineers to achieve extended battery range, increased system reliability and lower design cost. In industrial designs, the new devices enable high efficiency and power density in AC/DC power-delivery applications where low losses and reduced board space are important — such as hyperscale and enterprise computing platforms as well as 5G telecom rectifiers.
"Industrial and automotive applications increasingly demand more power in less space, and designers must deliver proven power management systems that operate reliably over the long lifetime of the end equipment," said Steve Lambouses, vice president for High Voltage Power at TI. "Backed by more than 40 million device reliability hours and more than 5 GWh of power conversion application testing, TI's GaN technology provides the lifetime reliability engineers require in any market."
