Delivering what it claims is twice the performance of double data rate 4 (DDR4), Samsung Electronics Co. Ltd. has expanded its double data rate 5 (DDR5) dynamic random access memory (DRAM) portfolio with the fist 512GB DDR5 module based on high-K metal gate (HKMG) process technology.
The new DDR5 memory can handle workloads in supercomputing, artificial intelligence and machine learning as well as data analytics applications.
Samsung’s HKMG technology has been traditionally used in logic semiconductors. Samsung replaced the insulator layer, which could lead to higher leakage current to reduce the leakage and improve performance.
Samsung said the memory will use about 13% less power, which makes it suitable for datacenters where energy efficiency is critical. Samsung’s DDR5 stacks eight layers of 16 Gb DRAM chips to offer capacity of 512GB.
“As the amount of data to be moved, stored and processed increases exponentially, the transition to DDR5 comes at a critical inflection point for cloud datacenters, networks and edge deployments,” said Carolyn Duran, vice president and GM of Memory and IO Technology at Intel. “Intel’s engineering teams closely partner with memory leaders like Samsung to deliver fast, power-efficient DDR5 memory that is performance-optimized and compatible with our upcoming Intel Xeon Scalable processors, code-named Sapphire Rapids.”