U.S. foundry Polar Semiconductor is collaborating with Nexperia B.V. to manufacture next-generation power MOSFETs at Polar's chipmaking manufacturing facility.
Under the deal, Polar’s power semiconductor manufacturing and capacity expansion will be used to manufacture Nexperia’s power MOSFET technology that is being used for AI server infrastructure, robotics, industrial and automotive applications.
Polar Semiconductor has been transitioning to a U.S.-based foundry after years of being co-owned by two Japanese tech firms. The pure-play foundry received $120 million in direct funding from the CHIPS and Science Act that would be used to expand the facility and introduce new processing capabilities.
Part of these capabilities include gallium nitride on silicon (GaN-on-Si) devices through a deal with Renesas and others in its 200 mm automotive-qualified manufacturing fab in Minnesota. Initial production of GaN devices is slated to begin at the end of 2026.
Polar is also set to become the only U.S.-based foundry capable of high-volume power bipolar-CMOS-DMOS (BCD) semiconductor wafer production for aerospace, defense and commercial end markets through a deal with Tower Semiconductor.
Through the Nexperia deal, the portfolio of MOSFETs spans a range of voltage classes and package types for power electronics requirements.
“This collaboration is an important step in strengthening Nexperia’s long‑term manufacturing and supply-chain strategy,” said Stefan Tilger, interim CEO of Nexperia. “By working closely with Polar Semiconductor, we are securing reliable capacity, and providing our customers with a strong, stable, and resilient supply foundation to support future growth.”
