The new Vishay Siliconix automotive grade SQJ152ELP MOSFET, a technically advanced upgrade to the Vishay SQJ858AEP, is now available from New Yorker Electronics. This 40 V, 5.5 mΩ TrenchFET® Gen IV in a PowerPAK® SO-8L is an automotive N-channel 175° C metal–oxide semiconductor field-effect transistor (MOSFET).
Source: New Yorker Electronics
Combining upgraded performance figures and robustness, the Vishay SQJ152ELP from New Yorker Electronics is well-suited to replace the SQJ858AEP in new designs for multiple automotive applications, including solid state relays, high side switches, motor drive controls and other safety and convenience systems. The device’s package construction employs a wire-free design that extends the MOSFET’s drain current capabilities, while reducing its thermal resistance. Compared to the SQJ858AEP, the SQJ152ELP’s continuous drain current rating has increased by 112%.
The SQJ152ELP’s typical drain-source on resistance (RDS(ON)) - total gate charge (Qg) figure of merit (FOM) at a voltage from gate to source of 4.5 V is 61 mΩ × nC, which is the lowest among similar products with RDS(ON) of 4.5 mΩ to 6.5 mΩ. The 38% lower Qg reduces gate driver related power losses and contributes to the class-leading FOM, which, according to Vishay, is 5% lower than the next best product on the market.
In addition to its improved electrical parameters, the PowerPAK SO-8L package offers proven board-level reliability capabilities. Its internal construction and external gullwing leads are engineered for maximum stress relief during extremes of thermal and mechanical stress. The package has passed extended powered temperature cycling and rapid temperature cycling, as well as PCB flexing and vibration tests.
