Industrial Electronics

High-voltage gate driver with 6 kV galvanic isolation

04 November 2020

A compact, high-voltage gate driver for applications that require up to 6 kV galvanic isolation between the gate-driving channel and the low-voltage control and interface circuitry has been launched by ST Microelectronics.

The STGAP2HS is a 200 V device that can sink and source up to 4 A output current to simplify the design and enhance the reliability of mid- and high-power convertors, power supplies and inverters in home appliances and industrial equipment such as factory automation, fans, induction heaters, welders and UPS.

Fabricated using ST’s bipolar-complementary metal-oxide semiconductor (CMOS)-double diffused metal-oxide semiconductor 6s technology, the device has dual input pins that give designers control over signal polarity and provides interlocking protection in hardware to prevent cross conduction if the controller malfunctions. The inputs are compatible with CMOS/transistor-transistor logic down to 3.3 V, offering easy interfacing with control devices. Matched propagation delays between the low-voltage and high-voltage Source: ST MicroelectronicsSource: ST Microelectronicssections prevent cycle distortion, minimize energy losses and allow high-frequency operation. Common-mode transient immunity is ±100 V/ns across the full temperature range of -40° C to 125° C.

Housed in a wide-body SO-8W package that ensures creepage within a space-efficient footprint, the STGAP2HS is available in two different configurations. One has separate output pins that allow independent optimization of turn-on and turn-off times using a dedicated gate resistor. The second configuration features a single output pin and Miller-clamp function that prevents gate spikes during fast commutations in half-bridge topologies. Each configuration lets designers use N-channel metal-oxide semiconductor field-effect transistors in both the high-side and low-side bridge circuitry and thus lower the bill of materials for external components.

In addition to over-temperature protection, the STGAP2HS integrates dedicated undervoltage-lockout protection and thermal-shutdown protection on both the low-voltage section and the high-voltage driving channel. This enhances reliability by preventing the power switches from operating in low-efficiency or dangerous conditions. Input-to-output propagation delay of less than 75 ns permits accurate pulse-width modulation control and a standby mode helps designers reduce system power consumption.

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