600 V MOSFET Lowers Conduction, Switching Losses 

09 February 2017

Vishay Intertechnology, Inc. has introduced the first device in its fourth generation of 600 V E Series power MOSFETs. Providing high efficiency for telecom, industrial and enterprise power supply applications, the Vishay Siliconix n-channel SiHP065N60E slashes on-resistance by 30 percent compared to previous 600 V E Series MOSFETs, while delivering 44 percent lower gate charge. This results in the industry’s lowest gate charge times on-resistance, a key figure of merit (FOM) for 600 V MOSFETs used in power conversion applications.

Built on Vishay’s latest energy-efficient E Series superjunction technology, the SiHP065N60E features low maximum on-resistance of 0.065 Ω at 10 V, and ultra-low gate charge down to 49 nC. The device’s FOM of 2.8 Ω*nC is 25% lower than the closest competing MOSFET in the same class. For improved switching performance, the SiHP065N60E provides low effective output capacitances Co(er) and Co(tr) of 93 pf and 593 pF, respectively. These values reduce conduction and switching losses to save energy in power factor correction and hard-switched DC/DC converter topologies for telecom, industrial and enterprise power systems.

Offered in the TO-220AB package, the device released today is RoHS-compliant, halogen-free and designed to withstand overvoltage transients in the avalanche mode with guaranteed limits through 100 percent UIS testing.

Samples of the SiHP065N60E are available now. Production quantities carry lead times of 10 weeks.

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