TagoreTech Inc., a developer of disruptive semiconductor solutions, announces its participation in the International Microwave Symposium (IMS) 2025.
At the Moscone Center in San Francisco, California, TagoreTech will showcase its latest innovations, including gallium arsenide (GaAs) low noise amplifiers (LNAs), resilient LNAs, second-generation gallium nitride (GaN)-based radio frequency (RF) switches, MCM switch-LNA modules and GaN power amplifier
devices. Visit TagoreTech at booth #332 during June 15 to June 20.
“TagoreTech continues to push boundaries in RF performance with practical, scalable solutions that address real design challenges,” said Paul Hart, CEO and president of TagoreTech. “Our work in GaN and wide bandgap technologies aligns with the IMS mission of driving technical innovation in high-reliability, high-frequency applications.”
“IMS is the premier stage for RF and microwave innovation, and we're excited to showcase how our latest GaAs LNAs, GaN switches, and integrated modules deliver real performance and integration benefits,” said Klaus Buehring, chief marketing officer at TagoreTech. “Our focus remains on helping customers reduce system complexity and power consumption while accelerating time-to-market across infrastructure, defense, and emerging wireless applications.”
“Our second-generation GaN RF switches and hybrid modules reflect our ongoing commitment to simplifying high-power system design,” said Manish Shah, chief technology officer at TagoreTech. “We’re leveraging the unique properties of wide bandgap semiconductors to achieve superior switching performance, noise figure, and integration density — all critical to today’s radiofrequency front-end architectures.”
Leveraging the advantages of wide bandgap technologies, Tagore’s proprietary solutions help reduce system complexity, size and power consumption across a broad range of applications — from 5G infrastructure to consumer electronics, automotive, defense and public safety systems.
