Chipmaker Onsemi has introduced its latest generation of silicon carbide (SiC) technology platform as well as plans to release multiple SiC generations through 2030.
Called the EliteSiC M3e MOSFETs, the devices will play a fundamental role in future emerging technologies like electric vehicles (EVs) and renewable energy resources, Onsemi said.
The MOSFETs can operate at higher switching frequencies and voltages while minimizing power conversion losses. This makes it applicable for automotive and industrial applications such as:
- Powertrains
- DC fast chargers
- Solar inverters
- Energy storage systems
Onsemi said as climate change continues to impact global energy demands, governments and industries’ commitment to climate goals and migrating to renewable energy sources is increasing as they race to reduce carbon emissions.
“The future of electrification is dependent on advanced power semiconductors,” said Simon Keeton, group president of power solutions at Onsemi. “Today’s infrastructure cannot keep up with the world’s demands for more intelligence and electrified mobility without significant innovations in power. This is critical to the ability to achieve global electrification and stop climate change.”
Future demand
To meet future demand, Onsemi plans to roll out over the next decade a variety of SiC devices with its roadmap calling on new die architectures and novel packaging techniques to address the need for increased power density.
This roadmap also includes cell structures that will be optimized to push more current through a smaller area as well as increase the power density. Onsemi said it will develop multiple generations in parallel and accelerate its roadmap to bring several EliteSiC products to market.
“We are applying our decades of experience in power semiconductors to push the boundaries of speed and innovation in our engineering and manufacturing capabilities to meet the rising global energy demands,” said Dr. Mrinal Das, senior director of technical marketing, Power Solutions Group, Onsemi. “There is a huge technical interdependency between the materials, device and package in silicon carbide. Having full ownership over these key aspects allows us to have control over the design and manufacturing process and bring new generations to market much faster.”
About the devices
The MOSFETs are designed to reduce conduction and switching losses on architectures compared to previous generations. Additionally, the SiC MOSFETs offer a low specific-on-resistance (RSP) with short circuit capability for the traction inverter market that dominates SiC volume, Onsemi said. Other features compared to previous generations include:
- Fixed power level
- 20% more output power
- More phase current
- 30% conduction losses
- Up to 50% turn-off losses
