Semiconductor Equipment

SK Hynix to use dry resist EUV lithography for future DRAM

15 June 2022

For future production of advanced dynamic random-access memory (DRAM) semiconductors, SK Hynix has selected Lam Research’s dry resist fabrication technology that will be used for two key steps in the manufacturing process.

Dry resist technology extends the resolution, productivity, and yield of extreme ultraviolet (EUV) lithography, a semiconductor manufacturing technology used in the production of next generation semiconductors.

Both companies will collaborate on driving patterning innovations to remove roadblocks associated with scaling to future memory nodes with EUV lithography.

"Lam's dry resist technology is a game-changer,” said Richard Wise, VP and GM of the dry resist product group at Lam. “By innovating at the material level, it addresses EUV lithography's biggest challenges, enabling cost-effective scaling for advanced memory and logic.”

SK Hynix said the dry resist underlayer and dry development process for DRAM patterning will be critical to deliver the performance needed for connected devices. The Lam technology allows for precise, low defect and lower cost patterning, the company said.

Smaller and finer designs

The need for this type of patterning in EUV lithography is due to chip manufacturers moving to advanced technology nodes that must enable smaller and finer chip designs on a wafer.

The dry resist technology was developed by Lam in collaboration with ASML and Imec. The technology offers several advantages over conventional chemically amplified resist patterning for EUV lithography including:

  • Increases EUV sensitivity and resolution of each wafer pass.
  • Enables patterns that adhere to the wafer.
  • Improves performance and yield.
  • Offers sustainability benefits by consuming less energy and five to 10 times less raw materials than traditional chemical wet resist processes.
To contact the author of this article, email PBrown@globalspec.com


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