Applied Materials Inc. and Micron Technology are collaborating to develop next-generation DRAM, high-bandwidth memory (HBM) and NAND memory that increase energy efficiency performance in AI systems.
The collaboration will bring Applied’s R&D capabilities from its EPIC Center in Silicon Valley and Micron’s innovation center in Boise, Idaho. The goal is to improve memory technologies that are increasingly becoming a vital element of AI systems and data centers.
“Memory and storage are essential enablers of AI, and sustained innovation in these technologies is critical to unlocking AI’s full potential,” said Sanjay Mehrotra, chairman, president and CEO of Micron Technology.
Mehrotra added the combined R&D of the two companies will create a lab-to-fab pipeline that will help to advance American memory ecosystem.
The R&D teams from both companies will collaborate on:
- Next generation materials
- Process technologies
- Architectures for DRAM, HBM and NAND
Additionally, the companies will work on advanced packaging for AI workloads.
Applied’s EPIC center in Silicon Valley is said to be one of the largest U.S. investments in advanced semiconductor equipment R&D. The facility is slated to open later in 2026 and designed to reduce the time it takes to commercialize technologies from early-stage research to full-scale manufacturing.
The facility will include more than 180,000 square feet of cleanroom for collaborative efforts with universities, semiconductor vendors and other ecosystems partners.
