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New GaN FET Driver Provides Better Accuracy and Improved Resolution

14 June 2018

PSemi™ Corporation announces the availability of the PE29101 gallium nitride (GaN) field-effect transistor (FET) driver for solid-state light detection and ranging (LiDAR) systems. It enables design engineers to extract the full performance and switching speed advantages from GaN transistors. In solid-state LiDAR systems, faster switching leads to improved resolution and accuracy in the LiDAR image.

Source: PSemi CorporationSource: PSemi Corporation

LiDAR operates similarly to radar but uses pulsed lasers to map surrounding areas. LiDAR is now used in advanced driver assistance programs (ADAS) and is an enabling technology for fully autonomous vehicles. Solid-state LiDAR is affordable, reliable and compact.

GaN technology offers LiDAR systems superior resolution and a faster response time because of its very low input capacitance and its ability to switch significantly faster than metal-oxide semiconductor field-effect transistors (MOSFETs).

GaN FETs must be controlled by a very fast driver to maximize their fast-switching potential. Increasing the switching speed requires a driver with fast rise times and a low minimum output pulse width. The PE29101 offers these performance specifications, enabling GaN technology to improve LiDAR resolution.

The PE29101 is a half-bridge FET driver that controls the gates of GaN transistors. The driver outputs are capable of providing switching transition speeds in the sub-nanosecond range for switching applications up to 40 megahertz. The PE29101 has a rise/fall time of 1 nanoseconds with a 100 power-factor load and a minimum output pulse width of 2 nanoseconds. It operates from 4 to 6.5 volts and can support a high side floating supply voltage of 80 volts. The PE29101 has an output source current of 2 amps and an output sink current of 4 amps.

Offered as a flip-chip die, PE29101 volume-production parts, samples and evaluation kits are available now. Visit the PSemi™ Corporation site for more details.

To contact the author of this article, email [email protected]


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