ROHM and ST Microelectronics, a global semiconductor provider serving customers across the spectrum of electronics applications, announced the expansion of the existing multi-year, long-term 150 mm silicon carbide (SiC) substrate wafers supply agreement with SiCrystal, a ROHM group company. The new multi-year agreement governs the supply of larger volumes of SiC substrate wafers manufactured in Nuremberg, Germany, for a minimum expected value of $230 million.
Geoff West, EVP and chief procurement officer, ST Microelectronics, commented “This expanded agreement with SiCrystal will bring additional volumes of 150 mm SiC substrate wafers to support our devices manufacturing capacity ramp-up for automotive and industrial customers worldwide. It helps strengthen
Source: SiCrystal our supply chain resilience for future growth, with a balanced mix of in-house and commercial supply across regions.”
“SiCrystal is a group company of ROHM, a leading company of SiC, and has been manufacturing SiC substrate wafers for many years. We are very pleased to extend this supply agreement with our longstanding customer ST. We will continue to support our partner to expand SiC business by ramping up 150 mm SiC substrate wafer quantities continuously and by always providing reliable quality.” said Dr. Robert Eckstein, president and CEO of SiCrystal, a ROHM group company.
Energy-efficient SiC power semiconductors enable electrification in the automotive and industrial sectors in a more sustainable way. By facilitating more efficient energy generation, distribution and storage, SiC supports the transition to cleaner mobility solutions, lower emissions industrial processes and a greener energy future, as well as more reliable power supplies for resource-intensive infrastructure like data centers dedicated to artificial intelligence (AI) applications.
