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Electronics and Semiconductors

DENSO and FLOSFIA Focus on Next-gen Power Semiconductor Device for EVs

08 January 2018

Automotive supplier Denso Corporation and Flosfia Inc., a tech startup spun from Kyoto University, are partnering to develop a next-generation power semiconductor device expected to reduce the energy loss, cost, size and weight of inverters used in electric vehicles (EVs).

Professor Shizuo Fujita at Kyoto University pioneered the application of corundum structured gallium oxide (α-Ga2O3) for use in semiconductors, which provide superior performance to other semiconductors on the market. These semiconductors have a wide bandgap of 5.3 eV and high electric breakdown field strength, meaning they can better withstand high voltage applications. The α-Ga2O3 devices are expected to replace today's current silicon and silicon carbide power semiconductors for EV technology applications.

Established at Kyoto University in 2011, Flosfia is a leader in R&D and α-Ga2O3 commercialization. Aligning with its vision to create the future of mobility through connected, automated drive and electrification technologies, Denso became interested in Flosfia's technology. The two will further research and develop technology in high-voltage products for hybrid and electric vehicles, including semiconductors.

To contact the author of this article, email sue.himmelstein@ieeeglobalspec.com


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