Rohm has unveiled a 100 V power metal-oxide-semiconductor field-effect transistor (MOSFET) for hot-swap circuits in 48 V power systems in AI data servers and industrial power supplies requiring battery protection.
The company said data centers are facing increasing power demands due to generative AI and high-performance graphics processing units (GPUs). This is creating a need to improve efficiency while supporting higher currents. To that end, AI data centers are shifting from 12 V to more efficient 48 V power architectures, where hot-swap circuits are used to replace modules without shutdown.
Dubbed RY7P250BM, the MOSFET combines a wide safe operating area (SOA) and low ON-resistance that helps to reduce power loss, heat and cooling requirements in AI servers.
Additionally, these components enhance server reliability and energy efficiency.
The MOSFET achieves a wide SOA for hot-swap circuits while achieving an ON-resistance of 1.86 milliohms, which Rohm said is about 18% lower than typical 2.28 milliohm MOSFETs.
Rohm said it will continue to expand its 48 V-compatible solutions for servers and industrial equipment to support information and communications technology (ICT) infrastructure and energy-savings.
