Power Semiconductors

ROHM establishes ultra-high-speed control IC technology that maximizes the performance of GaN devices

27 March 2023

ROHM Semiconductor has engineered ultra-high-speed control IC technology that maximizes the performance of gallium nitride (GaN) and other high-speed switching devices.

While the adoption of GaN devices has expanded in recent years due to their superior high-speed switching characteristics, the speed of control ICs, which are responsible for directing the driving of these devices, has become challenging. In response, ROHM has further evolved its ultra-high-speed pulse control technology, Nano Pulse Control. This technology is cultivated for power supply ICs, succeeding in significantly improving the control pulse width from the conventional 9 nanoseconds to an industry-best 2 nanoseconds. Leveraging this technology has allowed ROHM to establish its ultra-high-speed control IC technology that maximizes the performance of GaN devices.

Source: ROHMSource: ROHM

When pursuing miniaturization of the power supply circuit, it is necessary to reduce the size of the peripheral components through high-speed switching. Achieving this requires a control IC that can take advantage of the drive performance of high-speed switching devices such as GaN devices. To propose solutions that include peripheral components, ROHM established ultra-high-speed control IC technology optimized for GaN devices utilizing proprietary analog power supply technology Nano Pulse Control.

ROHM is currently working to commercialize control ICs utilizing this technology, with plans to start sample shipment of a 100 V 1ch DC-DC control IC in the second half of 2023. Using this technology in conjunction with ROHM GaN devices (EcoGaN series) is expected to result in significant energy savings and miniaturization in a variety of applications, including base stations, data centers, factory automation equipment and drones.

To contact the author of this article, email GlobalSpecEditors@globalspec.com


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