Applications for wide bandgap semiconductor materials such as gallium nitride (GaN) and silicon carbide (SiC) are increasingly making headlines in power electronics news. GaN has displaced silicon as a material of choice for power transistors thanks to its superior properties and ease of use. SiC has proven similarly advantageous over silicon in high-power, high-voltage applications thanks to its higher breakdown field strength and improved thermal conductivity. Applications for SiC include solar inverters, welding, plasma cutters, fast vehicle chargers and oil exploration.
Electronic component distributor Richardson RFPD Inc., an Arrow Electronics company and exhibitor at the Applied Power Electronics Conference (APEC), will be highlighting components and evaluation platforms based on the two materials at the show. Featured products for wireless charging and DC fast charging applications include the 6.6 kW bi-directional EV on-board charger and the SiC 20 kW LLC reference design from Wolfspeed; PDFN packaged GaN for low power applications from GaN Systems; and the low inductance SP6LI driver reference design from Microsemi. Associated passive and thermal products optimized for GaN/SiC and charging applications from a range of companies will also be featured.
Additionally, Richardson RFPD has launched a microsite to highlight news on innovations and product releases related to GaN and SiC, dubbed the GaN & SiC for Power Electronics Tech Hub. According to the company, the hub offers a robust library of product features and technical resources including whitepapers and videos — in addition to links for online purchasing.
APEC runs from March 17-21, 2019, at the Anaheim Convention Center in Anaheim, California. For more on the show, visit our dedicated section Electronics360 covers APEC 2019.