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New Transistor Incorporates Laterally Diffused Metal Oxide Semiconductor Technology

21 September 2017

Mouser Electronics is now stocking the MRFX1K80H LDMOS transistor from NXP® Semiconductors. The MRFX1K80H is part of the MRFX series of radio frequency (RF) MOSFET transistors that incorporate a new laterally diffused metal oxide semiconductor (LDMOS) technology. The LDMOS technology found in the MRFX1K80H helps increase the output power in wideband applications while maintaining appropriate output impedance.

(Mouser Electronics)(Mouser Electronics)

The NXP MRFX1K80H LDMOS transistor is designed to deliver 1800 W of a continuous wave at 65V for RF applications from 1.8 to 470 MHz. They have the ability to handle a voltage standing wave ratio (VSWR) of 65-to-1 at all phase angles. The device offers impedance matching to 50 Ohms that helps to reduce the overall development time. Designed for an extended power range from 30V to 65V, the MRFX1K80H has a high breakdown voltage that provides enhanced reliability and higher efficiency. The high voltage lowers the current in the system, limiting the stresses on DC power supplies thereby reducing magnetic radiation. The higher output power also helps decrease the number of transistors to combine and simplify the power amplifier complexity and reduce the overall size.

The MRFX1K80H is suitable for linear applications with appropriate bias and offers integrated electrostatic discharge (ESD) protection for improved Class C operation. Target applications for the MRFX1K80H include industrial, scientific and medical (ISM) applications along with broadcast, aerospace and mobile radio equipment.

To learn more about this new transistor, visit the Mouser site here.

To contact the author of this article, email Siobhan.Treacy@ieeeglobalspec.com


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