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Semiconductors and Components

Littelfuse SiC Technology Partner to Present at ICSCRM 2017

15 September 2017

Littelfuse, Inc. announces two presentations being made by Monolith Semiconductor at the International Conference on Silicon Carbide and Related Materials (ICSCRM) 2017. The six-day conference is hosted at the Marriott Wardman Park in Washington, D.C., on September 17 through 22, 2017.

ICSCRM is one of the most important technical conferences in the world for power electronics and technologies based on silicon carbide (SiC),” acknowledges Corey Deyalsingh, Director of Power Semiconductor at Littelfuse. “Together, Littelfuse and Monolith are driven to deliver the future of power semiconductor today, while aggressively investing in a robust technology-product roadmap into the future.”

“Our team’s focus is on commercializing and enabling widespread adoption of silicon carbide power semiconductors that ensure higher power density, greater energy efficiency and lower cost,” said Dr. Sujit Banerjee, CEO and co-founder of Monolith Semiconductor. “Participating in the ICSCRM conference as a sponsor affords us the opportunity to continue our educational outreach regarding the scientific and technical advancements being made in SiC power semiconductor technology.”

The following presentations will be made during the conference:

Reliability and Ruggedness of 1,200-volt SiC Planar Gate MOSFETs
Fabricated in a High-volume CMOS Foundry
Authors: Dr. Sauvik Chowdhury, Levi Gant, Blake Powell,
Kasturirangan Rangaswamy and Dr. Kevin Matocha
Monday, September 18, 2017, 10:24 AM
Location: Thurgood Marshall Ballroom
As an Invited Poster Presentation, this will also be presented Monday through Thursday as part of the Power Devices, Circuits and Applications sessions in Exhibit Hall C.

3,300 V SiC Planar DMOSFETs Fabricated on 150 mm Substrates
Authors: Blake Powell, Dr, Sauvik Chowdhury, Chris Hundley and Dr. Kevin Matocha
Tuesday, September 19, 2017, 4:15 PM
Session: Reliability and Ruggedness I
Location: Thurgood Marshall Ballroom, North Salon

In 2015, Littelfuse and Monolith formed a strategic partnership to develop power semiconductors for industrial and automotive markets. In March 2017, Littelfuse made an incremental $15 million investment, resulting in a majority ownership position in Monolith. Results of the collaboration include the release of the first GEN2 1,200-volt SiC Schottky Diode Series in May, with new 1,200 volt-rated SiC MOSFETs to follow later in 2017.

To contact the author of this article, email sue.himmelstein@ieeeglobalspec.com


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30 Nov-01 Dec 2017 Helsinki, Finland
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