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Analog/Mixed Signal

Asymmetric Doherty GaN-on-SiC Amplifier Improves Efficiency in Base Station Equipment

11 August 2017

Qorvo has introduced a new asymmetric Doherty amplifier targeted at ultra-high levels of power efficiency in the design of wireless base station equipment.

The gallium nitride on silicon carbide (GaN-on-SiC) amplifier features two transistors in a single package for linearity, efficiency and gain as well as to reduce operating costs.

GaN devices have the ability to handle more power than other high-frequency technologies like GaAs and InP with better frequency performance characteristics, Qorvo says.

The QPD2731 device improves performance, linearity and efficiency with pre-matched, discrete GaN-on-SiC high electron mobility transistors (HEMTs) and provides an operating range of 2.5 to 2.7 GHz, Qorvo says.

The new amplifier is currently sampling.

To contact the author of this article, email Peter.Brown@ieeeglobalspec.com


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