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RF Transistor Enables More Rugged Devices in a Shorter Time

12 April 2017

The MRFX1K80 RF transistor. Image credit: NXP Semiconductors The MRFX1K80 RF transistor. Image credit: NXP Semiconductors

NXP Semiconductors N.V. has introduced a new laterally diffused metal oxide semiconductor (LDMOS) technology for RF power transistors that operates up to 65 V.

The new technology features higher voltage output power, an increase in output power while retaining a reasonable output impedance, is pin-to-pin compatible with current LDMOS transistors in NXP’s lineup and has a breakdown voltage of 182 V for added reliability and higher efficiency architectures.

The first RF transistor from the new LDMOS technology will be the MRFX1K80 designed to deliver 1,800 watts of continuous wave at 65 V for applications from 1 to 470 megahertz. The device is targeted at the industrial, scientific and medical industries for laser generation, plasma etching, magnetic-resonance imaging (MRI), skin treatment and diathermy as well as particle accelerators. The MRFX1K80 also can be used in industrial heating, welding, curing or drying machines.

The RF transistor is currently sampling with production slated for August.

To contact the author of this article, email Peter.Brown@ieeeglobalspec.com


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