Acquired Electronics360

Aerospace

Platform Evaluates Enhancement-mode GaN HEMTs in System Design

11 November 2016

To enable power electronics engineers to quickly evaluate the performance of gallium nitride (GaN) based enhancement-mode high-electron-mobility transistors (e-HEMTs), Canadian fabless semiconductor company GaN Systems has launched a daughterboard-style evaluation kit. It comprises a universal motherboard (GS665MB-EVB) and four daughterboards ranging from 750 W to 2,500 W. Each daughter card consists of two GaN Systems’ 650 V GaN e-HEMTs and all the necessary circuits, including half-bridge gate drivers, isolated power supplies and an optional heatsink to form a high performance half-bridge power stage. The gate drivers utilized are Silicon Labs Si8271.

Motherboard, daughter board combination helps power electronics engineers evaluate gallium nitride (GaN) based 650 V enhancement-mode HEMTs in any half-bridge based power supply topology.   Image Credit: GaN Systems Motherboard, daughter board combination helps power electronics engineers evaluate gallium nitride (GaN) based 650 V enhancement-mode HEMTs in any half-bridge based power supply topology. Image Credit: GaN Systems The motherboard and daughterboard combination offers a reference design that enables power design engineers to evaluate the performance of these 650 V GaN e-HEMTs in a system design, such as a buck, boost or double pulse tester. Since the vertical mount style daughtercard offers a 35 mm height, it meets the 1U design requirements of many power supply units. Because the evaluation platform offers a universal footprint, it allows designers to investigate the performance of these GaN transistors at various power levels for optimal cost-performance decisions.

The four compatible daughtercards for the 650 V universal motherboard include GS66504B-EVBDB, GS66508B-EVBDB, GS66508T-EVBDB, and GS66516T-EVBDB. These interchangeable daughtercards accommodate 650 V GaN e-HEMTs ranging from 15 A to 60 A, as well as the fast switching isolated gate driver Si8271 offering high common-mode transient immunity (CMTI) rating and low under voltage lockout (UVLO). Together with the motherboard, it allows engineers to evaluate GaN e-HEMT performance in any half-bridge based power supply topology.

Additionally, GaN Systems has also released a demo board, labeled GS61008P-EVBBK, for evaluating 100 V, 90 A GaN e-HEMT GS61008P in a highly efficient 48 V to 12 V synchronous buck converter system utilizing switching frequencies up to 2 MHz.



Powered by CR4, the Engineering Community

Discussion – 0 comments

By posting a comment you confirm that you have read and accept our Posting Rules and Terms of Use.
Engineering Newsletter Signup
Get the Engineering360
Stay up to date on:
Features the top stories, latest news, charts, insights and more on the end-to-end electronics value chain.
Advertisement
Weekly Newsletter
Get news, research, and analysis
on the Electronics industry in your
inbox every week - for FREE
Sign up for our FREE eNewsletter
Advertisement

CALENDAR OF EVENTS

Date Event Location
30 Nov-01 Dec 2017 Helsinki, Finland
23-27 Apr 2018 Oklahoma City, Oklahoma
18-22 Jun 2018 Honolulu, Hawaii
Find Free Electronics Datasheets
Advertisement