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VisIC Launches 1200 V GaN Devices

12 October 2016

New 1200 V half-bridge GaN module with integrated drivers     Credit: VisIC Technologies New 1200 V half-bridge GaN module with integrated drivers Credit: VisIC Technologies At the recent IEEE Energy Conversion Congress and Exposition in Milwaukee, WI, Israeli start-up company VisIC Technologies unveiled a new family of high-voltage gallium nitride (GaN) devices for switching power supplies. With 1200 V ratings, the GaN module offers typical on resistance of just 0.04 Ω. Target applications are power converters for motor drives, three-phase power supplies and other applications requiring current switching up to 50 A.

As per the product data sheet, VisIC’s 1200V GaN device is a half-bridge module that integrates GaN high-electron mobility transistors (HEMTs) and isolated gate drivers with over-current and over-temperature protections in a single package. The design takes advantage of VisIC's innovative SmartGaN technology, which uses a patented, high-density lateral layout that results in fast switching performance and low RDS(on).

The high-voltage GaN module offers reduced gate charge and capacitances with low RDS(on), so the switching energy for the GaN device is as low as 140 µJ. Consequently the switching losses are three to five times lower as compared to comparable silicon carbide MOSFETs, claims the maker. Also the isolated package offers 2.5 kV isolation and a thermal base plate for managing the heat.

According to the manufacturer, these 1200 V GaN devices supplement the company’s existing ALL Switch lineup of 650V GaN devices and are being supplied to select customers.



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