Spin Transfer Technologies, Inc. (STT) is preparing to deliver functional samples of its perpendicular spin transfer magneto-resistive random access memory (ST-MRAM) technology magnetic tunnel junctions (MTJs) to select customers.
MTJs are the primary components of an MRAM memory cell and the core technology of the devices. STT says it has developed working ST-MRAM memory chips internally for a while, but now it is looking to commercialize the technology, moving it from the R&D stage to the production stage.
STT says MRAM has the potential to replace major segments of the memory market for flash, SRAM and DRAM semiconductors in applications such as mobile products, automotive, the Internet of Things and data storage. The advantages of the technology include a boost to speed, power efficiency, cost and scalability.
The Fremont, California-based company says its integration of magnetics and CMOS has been demonstrated to operate in memory arrays with existing process standards, which means it should be able to move quickly into high-volume production of products.
“Since the beginning of the year, we’ve been able to process more than 40 wafer lots, an achievement that likely would have taken more than three years without our on-site R&D fab,” says Barry Hoberman, CEO of STT. “In just four years, STT has taken the journey from incubation to commercialization.”
STT says initial samples of the memory are targeted at non-volatile memory applications, and the company is preparing evaluation boards for customers to evaluate the memory.