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Semiconductors and Components

Peregrine Seeks to Displace Power MOSFETs with GaN FET Driver

12 July 2016

Peregrine Semiconductor Corporation has introduced a gallium nitride (GaN) field-effect transistor (FET) driver designed to replace MOSFETs in the power conversion market.

The PE29100 FET driver is built using Peregrine’s UltraCMOS technology to deliver fast switching speeds, short propagation delays, and lowest rise and fall times to AC-DC converters, DC-DC converters, class D audio amplifiers and wireless charging applications.

Compared to MOSFETs, GaN FETs operate much faster and have a higher switching speed while reducing the size and weight of any power supply, Peregrine says. In order to reach the performance potential, GaN transistors need an optimized gate driver that charges and discharges gate capacitance as fast as possible. Peregrine says the PE29100 is designed to help GaN transistors reach their potential.

Peregrine’s UltraCMOS technology allows integrated circuits to operate at much faster speeds than conventional CMOS technologies. The speed boost results in smaller power converters, which benefits designers with increased power density, the company says. The device is a half-bridge GaN FET driver with internal dead-time control, with operation speeds up to 33 MHz and handles voltages up to 80V. The FET driver has a one-pin, single-phase input mode, and has an output source current of 2A and an output sink current of 4A.

The PE29100 is available now in a 2 x 1.6mm flip-chip die for $1.80 in 1,000-unit quantities.

To contact the author of this article, email engineering360editors@ihs.com

To contact the author of this article, email Peter.Brown@ieeeglobalspec.com


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