Infineon Technologies AG has introduced its first RF power transistors manufactured on gallium nitride (GaN) on silicon carbide (SiC) technology.
Expanding its GaN-based portfolio, the devices are targeted at mobile base station manufacturers looking to build smaller and more flexible transmitters. Infineon says the GaN RF power transistors offer a higher efficiency, better power density and more bandwidth than traditional RF power transmitters used in cellular networks. These devices also offer a path to transition to 5G technology by allowing higher data volumes, the Munich, Germany-based company says.
The new RF power transistors leverage the performance of GaN technology to achieve 10% higher efficiency and five times the power density of the LDMOS transistors commonly used today., The GaN transistors allow for a smaller footprint and power requirements for the power amplifiers of base station transmitters. Future GaN on SiC devices will support for 5G bandwidth up to the 6 GHz frequency range, says the company.
Gerhard Wolf, vice president and general managerof Infineon’s RF power product line, says in a statement with the transition to wide bandgap semiconductor technology “we are setting the pace for the continued evolution of the cellular infrastructure.”
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