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Semiconductors and Components

MagnaChip Rolls High Voltage 0.13 EEPROM Core

03 February 2015

MagnaChip Semiconductor Corp. has begun offering a high voltage option for its 0.13 micron embedded EEPROM technology designed for noise immunity in touch sensing chips.

The 0.13 micron embedded EEPROM intellectual property (IP) core is targeted at improving the performance of touch controller ICs and MCUs by decreasing the density of 32Kbyte memory blocks by as much as half as well as adding increased voltage, MagnaChip said. The high voltage option features 10 volt and 20 volt transistors that MagnaChip claims will improve signal-to-noise performance.

Later in 2015, MagnaChip said it will introduce a 30V version suitable for larger screen mobile applications. The introduction of the high voltage EEPROM IP cores completes MagnaChip’s embedded EEPROM technology portfolio, the company said.

Namkyu Park, executive VP of MagnaChip’s Semiconductor Manufacturing Services division, said in a statement that the goal of the company is develop “competitive features that meet the increasing application specific needs of foundry customers.”

Questions or comments on this story? Contact dylan.mcgrath@ihs.com

Related links:

www.magnachip.com

IHS Memory

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