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Fujitsu Begins Mass Production of GaN in Foundry Fab

28 January 2015

Fujitsu Semiconductor Ltd. has started mass production of gallium nitride (GaN) power devices for Japanese semiconductor firm Transphorm Inc.

The production of the power devices is one of the first products to come from Fujitsu’s foundry operation created at its Aizu-Wakamatsu, Fukishima facility. Fujitsu in August of 2014 said it was converting two of its manufacturing facilities– the Aizu facility and the 300mm fab in the Mie prefecture – into independent foundry businesses. The Aizu fab, a large-scale, 150nm automotive-qualified facility, is providing exclusive GaN foundry services for Transphorm.

With increasing demand for GaN devices, Transphorm said it will use the increase in production of devices to enable the next wave of compact, energy-efficient power conversion systems. Fujitsu and Transphorm established a production relationship in 2013 and since that time the two companies have been working together to create production-ready GaN devices at the 150mm level and have been working toward the goal of mass production, the companies said.

Fumihide Esaka, CEO of Transphorm, said in a statement the manufacturing of the GaN devices at the Aizu facility will “assure our customers a scalable, stable supply of products” and the company plans to expand its power device portfolio with a “continued partnership with Fujitsu.

Questions or comments on this story? Contact dylan.mcgrath@ihs.com

Related links:

www.fujitsu.com

IHS Semiconductor Manufacturing

News articles:

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Fujitsu Targets Industrial Market with FRAM Chip

Why UMC is Boosting Automotive Chip Business

UMC Takes Stake in New Fujitsu Foundry

Who is the Next Takeover Target in Power Management?



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