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Semiconductors and Components

Qualcomm Offers 3G/LTE Modem on 20-nm Process

22 November 2013

Qualcomm Technologies Inc. has announced its fourth-generation 3G/LTE multimode modem chipset, the Gobi 9x35 plus the WTR3925 RF transceiver.

The Gobi 9x35 is designed in 20-nm manufacturing process technology and implements global carrier aggregation deployments of up to 40 MHz for both LTE TDD and FDD Category 6 with download speeds of up to 300 Mbps. The modem is backward compatible and supports all other major cellular technologies, including HSPA, CDMA, GSM and TD-SCDMA.

The 28-nm RF transceiver is Qualcomm Technologies' first single-chip RF for carrier aggregation.

The two chips work with the Qualcomm RF360 front-end to produce a global LTE chipset.

The carrier aggregation built in to the WTR3925 allows network operators to combine fragmented spectrum in all 3GPP-approved combinations of 5-, 10-, 15- and 20-MHz bandwidth channels. The WTR3925 also incorporates the Qualcomm IZat location platform designed for delivery of seamless global location.

It is anticipated that Qualcomm Gobi 9x35 and WTR3925 will begin sampling to customers early in 2014.

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