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New MOSFETs with a 1,200 V Voltage Rating Released

03 October 2017

Source: LittelfuseSource: Littelfuse

Littelfuse, Inc. introduced its first series of silicon carbide (SiC) MOSFETs. In March, Littelfuse took a step toward establishing industry leadership in the power semiconductor industry through a majority investment in the SiC technology development company, Monolith Semiconductor Inc.

The LSIC1MO120E0080 Series has a voltage rating of 1,200 V and is ultra-low (80mΩ) on-resistance and are the first organically designed, developed and manufactured SiC MOSFETs to be released by the partnership. This device is optimized for high-frequency switching applications, providing a combination of ultra-low switching losses and ultra-fast switching speeds that are unavailable with traditional power transistor solutions.

The SiC MOSFET Series allows greater energy efficiency, reduced system size/weight and increased power density in power electronics systems. It offers superior robustness and exceptional performance, even at high temperatures.

Typical applications for the SiC MOSFETs include power conversion systems like solar inverters; switch mode power supplies, UPS systems, moto drivers, high voltage DC/DC converters, battery chargers and induction heating.

The LSIC1MO120E0080 Series MOSFET offers ultra-fast switching that supports higher efficiency and increased power density, lower switching losses that allow for higher switching frequencies and higher operating temperature that ensures greater device robustness in a wider array of high-temperature applications.

For more information on these MOSFETs, visit the product page here.

To contact the author of this article, email Siobhan.Treacy@ieeeglobalspec.com


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